Temperature Dependence of Energy Band Gap of Silicon Semiconductor

Abstract

The energy band gap is a major factor in determining the electrical conductivity of a solid. Energy band gap is a gap of energy in solids where no electron states can exist. The energy band gap of semiconductors tends to decrease as the temperature is increased. The temperature dependence of the intrinsic carrier density is dominated by the exponential dependence on the energy band gap. In addition, one has to consider the temperature dependence of the effective densities of states and that of the energy band gap.The effective densities of holes in the valence band and the effective densities of electrons in the conduction bands are decreases with increasing energy band gap. At very low temperature, 0K both carriers remain in their respective bands and as the temperature increases carries starts to move from their bands