Temperature Dependence of The Conductivity of Gallium Arsenide (GaAs) Compound Semiconductor
dc.contributor.author | Aliyyi Adem, | |
dc.date.accessioned | 2024-04-02T11:15:30Z | |
dc.date.available | 2024-04-02T11:15:30Z | |
dc.date.issued | 2019-06 | |
dc.description.abstract | This study introduces the electrical and optical properties of (GaAs)compound semi conductor. And also,the temperature dependence of conductivity of (GaAs) compound semiconductor. This have been studied through determination of the factor of temper ature with mobility, carrier concentration, density of state and bulk conductivity. As temperature increases the conductivity of (GaAs) increases. GaAs also has a higher band gap so that the intrinsic carrier concentration would be low. a higher mobility can lead to an increase in conductivity. this Data was obtained and analyzed with aid of excel and origin softwares. | en_US |
dc.description.sponsorship | wolkite universty | en_US |
dc.identifier.uri | http://10.194.1.109:8080/xmlui/handle/123456789/883 | |
dc.language.iso | en | en_US |
dc.publisher | WOLKITE UNIVERSITy | en_US |
dc.title | Temperature Dependence of The Conductivity of Gallium Arsenide (GaAs) Compound Semiconductor | en_US |
dc.type | Thesis | en_US |