STOCHASTIC RESONANCE OF CHARGE CARRIERS DIFFUSION IN A SEMICONDUCTOR LAYER UNDER AN EXTERNAL HARMONIC POTENTIAL AND NONUNIFORM LOW TEMPERATURE

Abstract

We look into the dynamics of charge carriers walking along a semiconductor layer assisted by an external harmonic potential V (x) and nonuniform low temperature. We approx imated the harmonic potential as a parabola minimum at the center which forced the charge carriers to migrate and distribute around the central region. Then apply a nonuni form temperature which is the linear combination of two temperatures. The first one is low around the center, Such temperature favor the charge carriers to stay around the center. The other one is high around the center and decays as one moves away from the center. This temperature may force the charge carriers to migrate away from the center. So that the central region becomes less comfortable. Together with the trap potential depth, external potential and the nature of temperature force the system to behave like a bistable system. We studied the ways of mobilizing charge carriers along the semicon ductor layer with different controlling parameters. Moreover, the thermally activated rate of hopping of the charge carriers as a function of different model parameters is discussed in high barrier limit. In the presence of a time-varying signal, the stochastic resonance (SR) of the charge carriers dynamics is studied via two state approximation. Our finding shows a strong spectral amplification η at a low temperature.